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| FS5ASJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0239-0100 Rev.1.00 Aug.20.2004 Features * * * * * Drive voltage : 4 V VDSS : 60 V rDS(ON) (max) : 140 m ID : 5 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline MP-3A 2, 4 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Ratings 60 20 5 20 5 5 20 15 - 55 to +150 - 55 to +150 0.32 Unit V V A A A A A W C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS5ASJ-06F Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 60 20 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- TYP. -- -- -- -- 1.5 110 140 0.22 6.0 340 65 40 4 10 35 17 1.0 -- 30 Max. -- -- 100 10 2.0 140 190 0.28 -- -- -- -- -- -- -- -- 1.5 8.33 -- Unit V V A A V m m V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V ID = 2 A, VGS = 4 V ID = 2 A, VGS = 10 V ID = 2 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 30 V, ID = 2 A, VGS = 10 V, RGEN = RGS = 50 IS = 2 A, VGS = 0 V Channel to case IS = 5 A, dis/dt = -100 A/s Rev.1.00, Aug.20.2004, page 2 of 6 FS5ASJ-06F Performance Curves Drain Power Dissipation Derating Curve Drain Power Dissipation PD (W) 20 5 3 2 Maximum Safe Operating Area Drain Current ID (A) 16 12 101 7 5 3 2 100 7 5 3 2 Tc = 25C Single Pulse 10-1 7 100 2 3 5 7 101 tw = 100s 8 1ms 10ms DC 23 5 7 102 4 0 0 50 100 150 200 Case Temperature Tc (C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 20 Output Characteristics (Typical) 10 VGS = 10V 8V PD = 15W 6V 5V VGS = 10V 8V6V Tc = 25C Pulse Test 5V 4V PD = 15W Drain Current ID (A) 4V 12 Drain Current ID (A) 16 8 6 8 4 3V 3V 4 2 0 0 1.0 2.0 3.0 Tc = 25C Pulse Test 4.0 5.0 2.5V 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) 5.0 Drain-Source Voltage VDS (V) On-State Resistance vs. Drain Current (Typical) 200 Drain-Source On-State Voltage VDS(ON) (V) Tc = 25C Pulse Test Drain-Source On-State Resistance rDS(ON) (m) 4.0 160 VGS = 4V 120 3.0 ID = 8A 5A 2A 10V 2.0 80 1.0 40 Tc = 25C Pulse Test 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 2 4 6 8 10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS5ASJ-06F Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 101 7 5 4 3 2 100 7 5 4 3 2 10-1 0 10 23 5 7 101 Transfer Characteristics (Typical) 10 Drain Current ID (A) 8 Tc = 25C VDS = 10V Pulse Test Tc = 25C 75C 125C 6 4 2 0 VDS = 5V Pulse Test 23 5 7 102 0 2 4 6 8 10 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 2 103 7 5 3 2 102 7 5 Drain Current ID (A) Switching Characteristics (Typical) 102 7 5 4 3 2 101 7 5 4 3 2 100 -1 10 23 Switching Time (ns) Tch = 25C f = 1MHz VGS = 0V Ciss td(off) tf td(on) Capacitance (pF) tr Tch = 25C VDD = 30V VGS = 10V RGEN = RGS = 50 5 7 100 23 5 7 101 Coss 3 Crss 2 -1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) 10 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) 20 Gate-Source Voltage VGS (V) Tch = 25C ID = 5A VGS = 0V Pulse Test 8 Source Current IS (A) 16 6 VDS = 10V 20V 40V 12 4 8 Tc = 125C 4 2 75C 25C 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS5ASJ-06F On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V I = 2A 5D 4 Pulse Test 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (25C) Drain-Source On-State Resistance rDS(ON) (tC) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Drain-Source Breakdown Voltage V(BR)DSS (25C) Drain-Source Breakdown Voltage V(BR)DSS (tC) Transient Thermal Impedance Zth(ch-c) (C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.1 0.05 0.02 0.01 Single Pulse PDM tw D= T tw T 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 7 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 Channel Temperature Tch (C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS5ASJ-06F Package Dimensions MP-3A EIAJ Package Code JEDEC Code Mass (g) (reference value) 0.32 Lead Material Cu alloy 5.3 0.2 1 0.2 6.6 2.3 0.5 0.1 10.4 max 6.1 0.2 0.1 0.1 2.5 min 0.76 0.2 2.30.2 0.76 0.5 0.2 1.4 0.2 1 max Symbol 2.3 Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. A A1 A2 b D E e x y y1 ZD ZE Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Quantity Standard order code Standard order code example FS5ASJ-06F-T13 FS5ASJ-06F Taping 3000 Type name - T +Direction (1 or 2) +3 Plastic Magazine 75 Type name (Tube) Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 1 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. 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